Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasers
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Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
سال: 1988
ISSN: 0734-211X
DOI: 10.1116/1.584393